GaAs PV — TRISOLEGY

GaAs PV

Triple-junction and IMM technology, radiation-hardened. BOL efficiency up to 32%. Flight-proven across every orbit regime.

TJ32 Triple-Junction GaAs Solar Cell

Overview

TypeTriple-junction GaAs solar cell
SubstrateGe
Base MaterialGaInP / GaAs / Ge
AR-CoatingTiOx / Al₂O₃
Typical Size39.8 × 60.4 mm
40 × 80 mm
Other sizes can be customized
Thickness85 ± 20 μm
150 ± 20 μm
180 ± 20 μm
Mass/Area≤ 40 mg/cm²
≤ 70 mg/cm²
≤ 84 mg/cm²

Temperature Coefficients (20℃–80℃)

Jsc Temp Coeff11.0 μA/cm²/℃
Voc Temp Coeff−6.0 mV/℃
Jm Temp Coeff10.0 μA/cm²/℃
Vm Temp Coeff−6.3 mV/℃

Typical Electrical Performance (AM0, 1353 W/m², 25℃)

32%BOL Efficiency

Typical Performance Data — TJ32

ParameterBOL1E145E141E15
Efficiency ηbare (%)32.030.428.326.9
Short Circuit Jsc (mA/cm²)19.018.818.417.9
Open Circuit Voc (V)2.702.602.492.44
Current @ Max. Power Jm (mA/cm²)18.318.217.817.1
Voltage @ Max. Power Vm (V)2.372.262.152.13

TJ30 Triple-Junction GaAs Solar Cell

Overview

TypeTriple-junction GaAs solar cell
SubstrateGe
Base MaterialGaInP / GaAs / Ge
AR-CoatingTiOx / Al₂O₃
Typical Size40 × 80 mm
67.6 × 138.1 mm
Other sizes can be customized
Thickness40 ± 10 μm
85 ± 20 μm
150 ± 20 μm
180 ± 20 μm
Mass/Area≤ 24 mg/cm²
≤ 50 mg/cm²
≤ 79 mg/cm²
≤ 95 mg/cm²

Temperature Coefficients (20℃–80℃)

Jsc Temp Coeff12.0 μA/cm²/℃
Voc Temp Coeff−5.6 mV/℃
Jm Temp Coeff9.0 μA/cm²/℃
Vm Temp Coeff−5.8 mV/℃

Typical Electrical Performance (AM0, 1353 W/m², 25℃)

30%BOL Efficiency

Typical Performance Data — TJ30

ParameterBOL1E145E141E15
Efficiency ηbare (%)30.028.827.025.8
Short Circuit Jsc (mA/cm²)17.517.416.816.3
Open Circuit Voc (V)2.752.642.582.53
Current @ Max. Power Jm (mA/cm²)16.616.416.015.5
Voltage @ Max. Power Vm (V)2.452.382.282.25

Triple-Junction GaAs Solar CICs -TJ32 CIC

Cover-glass Interconnect Cells — Structural Features

Structural Features

Substrate MaterialGe
Base MaterialGaInP / GaAs / Ge
AR CoatingTiOx / Al₂O₃
Coverglass Thickness120 μm
Other thickness / ITO coverglass available
Size40.1 × 80.1 mm
67.7 × 138.2 mm
Other sizes can be customized
Thickness300 ± 25 μm
Average Weight≤ 115 mg/cm²
Service OrbitLEO · MEO · GEO

Key Components

Bypass ProtectionSi Diode

Bypass Diode

Forward Voltage (+2.5A)< 1.0 V
Reverse Current (−4.5V)< 0.7 mA

Interconnector

TypePull Test @ 45°
Silver> 1.6 N
Kovar (silver coated)> 1.6 N

Electrical Parameters @ AM0

1353 W/m² · T = 25℃

ParameterValue
Efficiency ηbare (%)32
Open Circuit Voc (V)2.70
Short Circuit Jsc (mA/cm²)18.8
Current @ Max. Power Jm (mA/cm²)18.2
Voltage @ Max. Power Vm (V)2.36

Triple-Junction GaAs Solar CICs -TJ30 CIC

Cover-glass Interconnect Cells — Structural Features

Structural Features

Substrate MaterialGe
Base MaterialGaInP / GaAs / Ge
AR CoatingTiOx / Al₂O₃
Coverglass Thickness120 μm
Other thickness / ITO coverglass available
Size40.1 × 80.1 mm
67.7 × 138.2 mm
Other sizes can be customized
Thickness300 ± 25 μm
Average Weight≤ 115 mg/cm²
Service OrbitLEO · MEO · GEO

Key Components

Bypass ProtectionSi Diode

Bypass Diode

Forward Voltage (+2.5A)< 1.0 V
Reverse Current (−4.5V)< 0.7 mA

Interconnector

TypePull Test @ 45°
Silver> 1.6 N
Kovar (silver coated)> 1.6 N

Electrical Parameters @ AM0

1353 W/m² · T = 25℃

ParameterValue
Efficiency ηbare (%)30
Open Circuit Voc (V)2.74
Short Circuit Jsc (mA/cm²)17.4
Current @ Max. Power Jm (mA/cm²)16.5
Voltage @ Max. Power Vm (V)2.44

Thermal Properties

CIC Thermal Absorption & Temperature Gradient

CIC Absorption Coefficient

≤ 0.89Absorption Coefficient

CIC Emissivity Coefficient

0.92Emissivity Coefficient

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